smd type transistors 2SD1963 features low saturation voltage. excellent dc current gain characteristics. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 6v collector current i c 3a collector power dissipation p c 0.5 w junction temperature tj 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage bv cbo i c =50a 50 v collector-emitter breakdown voltage bv ceo i c =1ma 20 v emitter-base breakdown voltage bv ebo i e =50a 6 v collector cutoff current i cbo v cb =40v 0.5 a emitter cutoff current i ebo v eb =5v 0.5 a dc current transfer ratio h fe v ce =2v, i c =0.5a 180 560 collector-emitter saturation voltage v ce(sat) i c =1.5 a, i b =0.15a 0.25 0.45 v output capacitance f t v ce =6v, i e = -50ma, f=100mhz 150 mhz transition frequency c ob v cb =20v, i e =0a, f=1mhz 35 pf h fe classification marking rank r s hfe 180 390 270 560 dg sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type ic smd type transistors smd type smd type smd type ic smd type smd type ic smd type smd type smd type ic smd type smd type smd type product specification 4008-318-123
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